Current position: Home >> Scientific Research >> Patents

一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法

Hits:

First Author:lianghongwei

Disigner of the Invention:liuyang,duguotong,Shen Rensheng,xiaxiaochuan

Affilication of Author(s):微电子学院

Application Number:CN103730549A

Authorization number:CN201410006227.7

Pre One:金属镁基UVC波段透明导电结构及其制备方法

Next One:一种太阳能电池表面低温钝化方法
Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep