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一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法

Release Time:2022-10-19  Hits:

First Author: 梁红伟

Disigner of the Invention: 柳阳,杜国同,申人升,夏晓川

Institution: 微电子学院

Application Number: CN103730549A

Authorization Number: CN201410006227.7

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