Release Time:2022-10-19 Hits:
First Author: 夏晓川
Disigner of the Invention: 梁红伟,杜国同,柳阳,申人升
Institution: 微电子学院
Application Number: CN104894520A
Authorization Number: CN201510226430.X
Prev One:一种用于高质量氧化物半导体材料制备的MOCVD加热盘
Next One:一种基于SiC衬底的垂直结构GaN基紫外LED及其制备方法