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一种用于高质量氧化物半导体材料制备的MOCVD加热盘

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First Author:liuyang

Disigner of the Invention:lianghongwei,xiaxiaochuan,Shen Rensheng,陈远鹏

Affilication of Author(s):微电子学院

Application Number:CN107083541A

Authorization number:CN201710261163.9

Next One:金属镁基UVC波段透明导电结构及其制备方法
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