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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H-SiC by metal-organic chemical vapor deposition
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论文类型：期刊论文
发表时间：2015-09-01
发表刊物：SUPERLATTICES AND MICROSTRUCTURES
收录刊物：SCIE、EI、Scopus
卷号：85
页面范围：482-487
ISSN号：0749-6036
关键字：Silicon carbide; Ultraviolet light-emitting diode; Distributed Bragg reflector; SiNx interlayer
摘要：Near-ultraviolet (UV) InGaN/AlGaN multiple quantum well (MQW) LEDs with 30 pairs AlGaN/GaN distributed Bragg reflectors (DBRs) were grown on 6H-SiC substrate by metal-organic chemical vapor deposition. A thin SiNx interlayer was introduced between the DBRs and n-GaN layer of the LED to reduce the threading dislocation density and result in enhancement the internal quantum efficiency (eta(int)) of the InGaN/AlGaN LED. The result indicates that the light output power for the LED with DBRs and SiNx interlayer was approximately 56% higher (at 350 mA) than the LED without DBRs and SiNx interlayer on 6H-SiC substrate, and this significant improvement in performance is attributed not only to the light extraction enhancement via the DBRs but also due to improve epilayer crystalline quality. (C) 2015 Elsevier Ltd. All rights reserved.