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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
Influence of Sb valency on the conductivity type of Sb-doped ZnO
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论文类型：期刊论文
发表时间：2015-08-31
发表刊物：THIN SOLID FILMS
收录刊物：SCIE、EI
卷号：589
页面范围：199-202
ISSN号：0040-6090
关键字：Antimony; Metal organic chemical vapor deposition; p-Type zinc oxide; X-ray photoelectron spectroscopy
摘要：Sb-doped ZnO thin films with different Sb concentrations were grown by varying mole ratio of Sb precursor to Zn precursor during the growth process using metal organic chemical vapor deposition technology. It was found that the valency of Sb changed from Sb3+ to Sb5+ in Sb doped ZnO with increasing mole ratio of Sb precursor to Zn precursor. The p-type ZnO was obtained only for ZnO films with lower mole ratio of Sb precursor. The conductivity type of Sb doped ZnO was changed from p-type to n-type accordingly. These results were suggested that the valency of Sb in ZnO is more important for obtaining p-type Sb doped ZnO thin films. (C) 2015 Published by Elsevier B.V.