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论文类型：期刊论文

发表时间：2013-08-01

发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录刊物：SCIE、EI

卷号：24

期号：8

页面范围：2750-2754

ISSN号：0957-4522

摘要：Ga2O3 thin films were deposited on c-plane Al2O3 substrates by electron beam evaporation equipment. The effects of post anneal treatment on structure and optical properties of Ga2O3 were investigated. The X-ray diffraction (XRD) results of the as-grown and the annealed samples indicated the films consisted with the mix of -phase polycrystalline and amorphous Ga2O3. The electron diffraction pattern confirmed the existence of the nanocrystal grains. AFM images revealed that the anneal treatment promoted the film crystallization. Both Ga2O3 fims exhibited high transparency from visible light to near infrared region. An obvious band gap broadening phenomenon was observed for the annealed sample comparing with the as-grown sample. The optical band gap of the annealed sample was as large as 5.68 eV, which was inconsistent with the bulk -phase Ga2O3. Meanwhile, the center of ultraviolet emission peak blue shifted about 0.42 eV for the annealed samples. The mechanism of the band gap broadening effect and ultraviolet emission peak blue shift were discussed.