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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode
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论文类型：期刊论文
发表时间：2013-08-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：EI、SCIE
卷号：24
期号：8
页面范围：2716-2720
ISSN号：0957-4522
摘要：GaN epilayers with porous SiNx interlayer and changed growth modes were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. Comparing with GaN epilayer grown by ordinary method, the crystalline qualities were significantly improved. The improvement was attributed to the reduction of the density of threading dislocations causing by over-growth process combining with delayed coalescence of individual GaN islands. The influence of the deposition and annealing of nucleation layer on the GaN regrowth was also discussed.