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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
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论文类型：期刊论文
发表时间：2013-08-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：SCIE、EI、Scopus
卷号：24
期号：8
页面范围：2923-2927
ISSN号：0957-4522
摘要：Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H-SiC by metal organic chemical vapor deposition using an in situ porous SiNx interlayer. The SiNx was formed in situ in the growth chamber by simultaneous flow of diluted silane and ammonia, leading to the formation of a randomly distributed mask layer and induced lateral overgrowth similar to conventional epitaxial lateral overgrowth of GaN. The full width at half maximum (FWHM) of X-ray diffraction peaks decreases dramatically by the SiNx interlayer, indicating an improved crystalline quality. Also, it was found that the biaxial tensile stress in the GaN film was significantly reduced by in situ SiNx interlayer from Raman spectra. Low temperature photoluminescence spectra exhibited a narrower FWHM by the SiNx interlayer.