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个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别：男
毕业院校：大连理工大学
学位：博士
所在单位：集成电路学院
学科：微电子学与固体电子学. 光学工程
办公地点：辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式：0411-62273210
电子邮箱：shjiank@dlut.edu.cn
Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N-2 atmosphere
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论文类型：期刊论文
发表时间：2012-02-01
发表刊物：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
收录刊物：EI、SCIE
卷号：23
期号：2
页面范围：542-545
ISSN号：0957-4522
摘要：Ga2O3 thin films were deposited on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition. The influence of annealing in N-2 atmosphere at the temperature in the range of 800-1,000 A degrees C was investigated by X-ray diffraction and optical transmittance spectra. With an increase of annealing temperature from 800 to 950 A degrees C, the transformation from the initial amorphous film to polycrystalline beta-Ga2O3 thin film was observed, and the transmittance was also improved remarkably. The optical band gap energy of the sample annealed at 950 A degrees C was evaluated as similar to 5 eV. Whereas, after an annealing at 1,000 A degrees C, the crystal quality became worse and the transmittance degraded. The mechanism of annealing in N-2 atmosphere was discussed in view of phase transition.