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论文类型：期刊论文

发表时间：2012-12-01

发表刊物：PLASMA SCIENCE & TECHNOLOGY

收录刊物：Scopus、SCIE、EI

卷号：14

期号：12

页面范围：1106-1109

ISSN号：1009-0630

关键字：plasma; numerical simulation; hydrogen dilution

摘要：The characteristics of homogeneous discharges in mixed gases of hydrogen diluted silane and argon at atmospheric pressure are investigated numerically based on a one-dimensional fluid model. This model takes into account the primary processes excitation and ionization, sixteen reactions of radicals with radicals in silane/hydrogen/argon discharges and therefore, can adequately represent the discharge plasma. We analyze the effects of very high frequency (VHF) on the densities of species (e, H, SiH3, SiH3+ and SiH2) in such discharges using the model. The simulation results show that the densities of SiH3, SiH3+, H, and SiH2 increase with VHF when the VHF ranges from 30 MHz to 150 MHz. It is found that the deposition rate of mu c-Si:H film depends on the concentration of SiH3, SiH3+, SiH2, and H in the plasma. The effects of VHF on the deposition rate and the amount of crystallized fraction for,u,c-Si:H film growth is also discussed in this paper.