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论文类型：期刊论文

发表时间：2010-02-01

发表刊物：PLASMA SCIENCE & TECHNOLOGY

收录刊物：SCIE、EI

卷号：12

期号：1

页面范围：71-75

ISSN号：1009-0630

关键字：plasma; numerical simulation; hydrogen dilution

摘要：Based on the one-dimensional fluid model, the characteristics of homogeneous discharges with hydrogen diluted silane and argon at atmospheric pressure are numerically investigated. The primary processes of excitation and ionization and sixteen reactions of radicals with radicals in silane-hydrogen-argon discharges are considered. The effects of hydrogen dilution on the densities of species (e, H, SiH3+, SiH3-, SiH3,) are analyzed. The simulation results show that the highest densities of e, SiH3+, H, SiH3-, SiH3 correspond to the optimal dilution concentration of H-2. The deposition rate of mu c-Si:H film depends on the SiH3 concentration, and atomic hydrogen in the plasma is found to play an important role in the crystallization fraction of the deposited films. This model explains the effects of H-2 dilution on the deposition rate and crystallized fraction of mu c-Si:H film growth.