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Indexed by:期刊论文

Date of Publication:2011-09-01

Journal:FUNCTIONAL MATERIALS LETTERS

Included Journals:Scopus、SCIE、EI

Volume:4

Issue:3

Page Number:217-219

ISSN No.:1793-6047

Key Words:Band gap engineering; alloyed semiconductor; electronegativity

Abstract:We have proposed an efficient method to quantitatively calculate the band gap values of ternary A(x)B(1-x)C and AB(x)C(1-x) alloyed semiconductors in terms of the dopant concentration x and some fundamental atom parameters such as electronegativity. The calculated band gap values of some typical alloyed semiconductors can agree well with the available experimental data. Taking MgxZn1-xO and CdxZn1-xO as examples, the composition dependent band gap values of alloys with both wurtzite and rocksalt structures were quantitatively predicted. This work provides a guideline in compositionally tuning the band gap of alloyed semiconductors, which will greatly facilitate the band gap engineering of semiconductors.