Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-09-01

Journal: FUNCTIONAL MATERIALS LETTERS

Included Journals: EI、SCIE、Scopus

Volume: 4

Issue: 3

Page Number: 217-219

ISSN: 1793-6047

Key Words: Band gap engineering; alloyed semiconductor; electronegativity

Abstract: We have proposed an efficient method to quantitatively calculate the band gap values of ternary A(x)B(1-x)C and AB(x)C(1-x) alloyed semiconductors in terms of the dopant concentration x and some fundamental atom parameters such as electronegativity. The calculated band gap values of some typical alloyed semiconductors can agree well with the available experimental data. Taking MgxZn1-xO and CdxZn1-xO as examples, the composition dependent band gap values of alloys with both wurtzite and rocksalt structures were quantitatively predicted. This work provides a guideline in compositionally tuning the band gap of alloyed semiconductors, which will greatly facilitate the band gap engineering of semiconductors.