Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-04-01

Journal: JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS

Included Journals: EI、SCIE

Volume: 22

Issue: 4

ISSN: 0218-1266

Key Words: Chemical-mechanical polishing (CMP); rule-based fill; DFM; ASIC

Abstract: Chemical-mechanical polishing (CMP) is an essential process in deep-submicrometer LSI manufacturing to achieve Chip's planarization. It includes two processes: back-end-of-line (BEOL) and front-end-of-line (FEOL). This paper focuses on the problem of BEOL in 65 nm copper process. Although model-based dummy metal fill has become a tendency recently, the proposed improved rule-based dummy fill is appropriate still. A middle scale design is used for simulation. The metal density, oxide thickness, copper thickness, capacitance variation and variation of layout data size were investigated. The results show that improved rule-based dummy fill and model-based dummy fill have the same planarization, and proposed method has small capacitance variation. The GDS file size of the proposed rule-based fill is less than the model-based fill's.