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论文类型：会议论文

发表时间：2010-06-26

收录刊物：EI、CPCI-S、Scopus

卷号：675-677

页面范围：45-48

关键字：Electron beam melting; Silicon; Dephosphorization; Rate constant

摘要：The effects of melting condition on the dephosphorization behavior in metallurgical grade silicon (MG-Si) by electron beam melting (EBM) were investigated in this study. Experiment results showed that phosphorus content decreased by evaporation with the increase of melting time, and evaporation rate increased with the increase of electron beam power. Phosphorus content decreased to below 0.1 ppmw by EBM treatment at 21 kW for 1800 seconds. The dephosphorization reaction was found to follow the first order kinetics. Dephosphorization rate was controlled by free evaporation.