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论文类型：会议论文

发表时间：2010-06-26

收录刊物：EI、CPCI-S、Scopus

卷号：675-677

页面范围：1311-1314

关键字：multicrystalline silicon; Si3N4 coating; minority-carrier lifetime

摘要：The Si3N4 protective coating has an important impact on avoiding melting silicon from contacting with the crucible wall directly. A mixed Si/Si3N4 layer was formed on the interface of silicon and Si3N4 coating, and the declination of N content was observed in this mixed layer. With the ingots condition of 1500 degrees C for 2 h, the large Si3N4 and SiC particles appeared in the mixed layer and the formation mechanism was discussed. The Si3N4 coating had significantly increased the lifetime of minority carriers by decreasing impurity content.