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论文类型：期刊论文

发表时间：2012-07-14

发表刊物：Advanced Materials Research

收录刊物：Scopus、CPCI-S、EI

卷号：531

页面范围：55-58

ISSN号：9783037854341

关键字：Electron beam injection; Solar energy materials; Silicon; Oxidation; Metal impurities

摘要：Electron beam injection(EBI) is a process of gathering the electrons in materials using electron beam(EB). The EBI technology is proposed for purification of silicon particles by removing metal impurities through high-temperature oxidation, EBI, and HF acid washing processes. Analysis of silicon particle morphology after high-temperature oxidation using digital camera and after EBI using scanning electron microscope(SEM) were conducted. Then, the composition of silicon particles was analyzed using inductively coupled plasma(ICP). The silicon particle colours turned bright after EBI; therefore, EBI can change the thickness of SiO2 films in addition to increasing the temperature of the silicon particles. The results show that this technology is effective in removing metal impurities in silicon particles.