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论文类型：期刊论文

发表时间：2012-07-01

发表刊物：MATERIALS LETTERS

收录刊物：SCIE、EI

卷号：78

期号：,SI

页面范围：4-7

ISSN号：0167-577X

关键字：Electron beam; Molten silicon; Metallurgy; Solar energy materials

摘要：In the current study, a new method for the removal of phosphorus in molten silicon, electron beam candle melting (EBCM), is proposed and discussed. The proposed method combines the characteristics of electron beam melting (EBM) and the high saturated vapor pressure of P in molten Si. Simulation results show the existence of three typical temperature distributions and morphologies of the molten pool that correspond to the different radii of the electron beam circular pattern at constant power. The critical molten pool with the maximum surface area and the minimum depth was determined. EBCM resulting in the critical molten pool was proven to be more effective in the removal of P in molten Si compared with EBM. In addition, the energy utilization ratio was enhanced. (C) 2012 Elsevier B.V. All rights reserved.