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Effects of Hf buffer layer at the Y-doped HfO2/Si interface on ferroelectric characteristics of Y-doped HfO(2 )films formed by reactive sputtering

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Date of Publication:2018-01-01

Journal:CERAMICS INTERNATIONAL

Volume:44

Issue:11

Page Number:12841-12846

ISSN No.:0272-8842

Pre One:中国电子废弃物现状及回收政策演变

Next One:Experimental evidence of ferroelectricity in calcium doped hafnium oxide thin films
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