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Date of Publication:2022-10-07
Journal:JOURNAL OF ALLOYS AND COMPOUNDS
Volume:861
ISSN No.:0925-8388
Key Words:"Y doped HfO2; Thin films; Phase transformation; Dielectric properties"
Pre One:Optimizing Annealing Process for Ferroelectric Y-Doped HfO2 Thin Films by All-Inorganic Aqueous Precursor Solution
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