Current position: Home >> Scientific Research >> Paper Publications

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Release Time:2024-04-29  Hits:

Date of Publication: 2022-10-03

Journal: APPLIED PHYSICS LETTERS

Institution: 材料科学与工程学院

Volume: 103

Issue: 19

ISSN: 0003-6951

Prev One:TiN Thin Film Electrodes on Textured Silicon Substrates for Supercapacitors

Next One:Conduction Mechanisms and Breakdown Characteristics of Al2O3-Doped ZrO2 High-k Dielectrics for Three-Dimensional Stacked Metal-Insulator-Metal Capacitors