location: Current position: Home >> Scientific Research >> Paper Publications

Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon

Hits:

Date of Publication:2022-10-03

Journal:VACUUM

Affiliation of Author(s):材料科学与工程学院

Volume:183

ISSN No.:0042-207X

Key Words:"Yttrium doped hafnium oxide; Sputtering; Thin film; SiO2 interlayer; Ferroelectric property"

Pre One:First-order reversal curve diagram and its application in investigation of polarization switching behavior of HfO2-based ferroelectric thin films

Next One:Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films