Hits:
Date of Publication:2022-10-03
Journal:VACUUM
Affiliation of Author(s):材料科学与工程学院
Volume:183
ISSN No.:0042-207X
Key Words:"Yttrium doped hafnium oxide; Sputtering; Thin film; SiO2 interlayer; Ferroelectric property"
Pre One:First-order reversal curve diagram and its application in investigation of polarization switching behavior of HfO2-based ferroelectric thin films
Next One:Insights into electrical characteristics of silicon doped hafnium oxide ferroelectric thin films