Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon
Release Time:2024-04-29 Hits:
Date of Publication: 2022-10-03
Journal: VACUUM
Institution: 材料科学与工程学院
Volume: 183
ISSN: 0042-207X
Key Words: "Yttrium doped hafnium oxide; Sputtering; Thin film; SiO2 interlayer; Ferroelectric property"