Release Time:2024-06-17  Hits:

Date of Publication: 2024-05-17

Journal: Materials Today Communications

Volume: 39

ISSN: 2352-4928

Key Words: Al1-xscxN film; Compressive stress; Cosputtering; Ferroelectric films; Ferroelectric property; In-plane stress; Nitrogen compounds; Plane-stress state; Sc incorporation; Si substrates; Textures; Thin films; Thin-films; Wurtzite structure; X ray diffraction analysis; X- ray diffractions; Zinc sulfide