location： Current position: Home >> Scientific Research >> Paper Publications

Realization of ferroelectricity in sputtered Al1-xScxN films with a wide range of Sc content

Hits:

Date of Publication:2024-05-17

Journal:Materials Today Communications

Volume:39

ISSN No.:2352-4928

Key Words:Al1-xscxN film; Compressive stress; Cosputtering; Ferroelectric films; Ferroelectric property; In-plane stress; Nitrogen compounds; Plane-stress state; Sc incorporation; Si substrates; Textures; Thin films; Thin-films; Wurtzite structure; X ray diffraction analysis; X- ray diffractions; Zinc sulfide

Pre One:Key Factors of Uniform Polarization Reversal Barrier in Wurtzite Materials Utilizing Machine Learning Methods

Next One:Enhancement of ferroelectricity in chemical-solution-deposited ZrO2 thin films through fine phase transition control
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep