Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition
Release Time:2024-09-06 Hits:
Indexed by: Journal Papers
Document Code: 395558
Date of Publication: 2024-07-18
Journal: ELECTRONICS
Volume: 13
Issue: 14
Key Words: FABRICATION; GROWTH; MECHANICAL-PROPERTIES; PECVD; SILICON-NITRIDE FILMS; STRESS; THIN-FILMS