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Date of Publication:2024-11-15

Journal:Materials Today Communications

Volume:41

ISSN No.:2352-4928

Key Words:Abnormally oriented grain; Al0.65sc0.35N film; Carrier concentration; Ferroelectric devices; Ferroelectric property; Ferroelectrics materials; Ferroelectric thin films; Gallium compounds; Leakage currents; Praseodymium alloys; Praseodymium compounds; Properties of Al; Reactive sputtering; Semiconducting indium phosphide; Silicon wafers; Sputtering pressures; Structure zone model; Substrates temperature; Surface discharges; Thin-films; Wide band gap semiconductors