Release Time:2024-11-27  Hits:

Date of Publication: 2024-11-15

Journal: Materials Today Communications

Volume: 41

ISSN: 2352-4928

Key Words: Abnormally oriented grain; Al0.65sc0.35N film; Carrier concentration; Ferroelectric devices; Ferroelectric property; Ferroelectrics materials; Ferroelectric thin films; Gallium compounds; Leakage currents; Praseodymium alloys; Praseodymium compounds; Properties of Al; Reactive sputtering; Semiconducting indium phosphide; Silicon wafers; Sputtering pressures; Structure zone model; Substrates temperature; Surface discharges; Thin-films; Wide band gap semiconductors