Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2014-03-01

Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Included Journals: EI、SCIE

Volume: 14

Issue: 1

Page Number: 154-160

ISSN: 1530-4388

Key Words: High-k; leakage model; metal-insulator-metal (MIM) capacitor; reliability; ZrO2

Abstract: This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO2/Al2O3/ZrO2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.