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Indexed by:期刊论文

Date of Publication:2014-03-01

Journal:IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Included Journals:SCIE、EI

Volume:14

Issue:1

Page Number:154-160

ISSN No.:1530-4388

Key Words:High-k; leakage model; metal-insulator-metal (MIM) capacitor; reliability; ZrO2

Abstract:This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO2/Al2O3/ZrO2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperature-dependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.