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Si掺杂HfO_2薄膜的铁电和反铁电性质

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Indexed by:期刊论文

Date of Publication:2014-06-08

Journal:物理学报

Included Journals:Scopus、SCIE、EI、PKU、ISTIC、CSCD

Volume:63

Issue:11

Page Number:294-298

ISSN No.:1000-3290

Key Words:HfO2薄膜;铁电;反铁电;相变

Abstract:通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究.反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185℃的测试温度范围内未出现反铁电→顺电相变.在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献.

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