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Indexed by:Journal Papers

Date of Publication:2020-03-01

Journal:ADVANCES IN MANUFACTURING

Included Journals:SCIE

Volume:8

Issue:1,SI

Page Number:97-106

ISSN No.:2095-3127

Key Words:Rotational grinding; Silicon wafer; Surface integrity; Cutting speed; Residual stress

Abstract:Mechanisms for removal of materials during the grinding process of monocrystalline silicon have been extensively studied in the past several decades. However, debates over whether the cutting speed significantly affects the surface integrity are ongoing. To address this debate, this study comprehensively investigates the effects of cutting speed on surface roughness, subsurface damage, residual stress, and grinding force for a constant grain depth-of-cut. The results illustrate that the changes in the surface roughness and subsurface damage relative to the grinding speed are less obvious when the material is removed in ductile-mode as opposed to in the brittle-ductile mixed mode. A notable finding is that there is no positive correlation between grinding force and surface integrity. The results of this study could be useful for further investigations on fundamental and technical analysis of the precision grinding of brittle materials.