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Indexed by:期刊论文

Date of Publication:2014-05-01

Journal:CHINESE PHYSICS LETTERS

Included Journals:SCIE、ISTIC、Scopus

Volume:31

Issue:5

ISSN No.:0256-307X

Abstract:p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO: As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of similar to 10(17) cm(-3) and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO: As by further introducing the p-ZnO/MgO/n-GaN heterostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods.