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Indexed by:期刊论文

Date of Publication:2014-04-01

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Included Journals:SCIE、EI

Volume:25

Issue:4

Page Number:1955-1958

ISSN No.:0957-4522

Abstract:The highly arrayed arsenic doped p-ZnO nanowires/n-ZnO thin film homojunction light-emitting diode was fabricated on semi-insulated Si substrate. The homojunction was consisted of high-quality n-ZnO thin film grown by metal-organic chemical vapor deposition technology following arsenic doped ZnO nanowires grown by chemical vapor deposition. The device shows good rectification characteristic with a turn-on voltage of similar to 4.8 V and reverse breakdown voltage of similar to 18 V. Moreover, two distinct electroluminescence bands centered at 2.35 and 3.18 eV are detected from this device under forward bias at room temperature.