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Indexed by:期刊论文

Date of Publication:2012-03-05

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:100

Issue:10

ISSN No.:0003-6951

Abstract:Ultraviolet electroluminescence was demonstrated from a p-ZnO:As/n-SiC(6H) heterojunction light-emitting diode at room-temperature. The p-ZnO:As was fabricated by out-diffusion of arsenic atoms from a sandwiched GaAs interlayer on SiC substrate. The p-type doping was confirmed by both Hall and low-temperature photoluminescence measurements. Under forward bias, an intense ultraviolet emission centered at 384 nm was achieved from ZnO side of the diode. Furthermore, the light-output-current characteristic was determined to evaluate the high-efficiency electroluminescence performance of the diode. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694025]