Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2017-01-01

Journal: RSC ADVANCES

Included Journals: EI、SCIE

Volume: 7

Issue: 80

Page Number: 50781-50785

ISSN: 2046-2069

Abstract: Simultaneous growth of different kinds of aligned GaN nanostructures (i.e., nanowires, needles, pyramids and micro-rods) on a single substrate was firstly realized at a low temperature of 790 degrees C by naturally changing the III/V ratio across the substrate via a coaxial pipeline configuration. The effects of substrate distance and growth pressure on nanostructure growth were investigated. The morphology variation from nanowires to micros-rods would be explained in terms of Ga species changing from the Ga element to GaN molecule in a hot-wall reactor. This work is helpful for on chip integration of different kinds of nanodevices on unusual substrates of low melting temperature.