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Indexed by:期刊论文

Date of Publication:2013-06-21

Journal:NANOTECHNOLOGY

Included Journals:SCIE、EI、PubMed、Scopus

Volume:24

Issue:24

Page Number:245306

ISSN No.:0957-4484

Abstract:InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.