Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-06-21

Journal: NANOTECHNOLOGY

Included Journals: Scopus、PubMed、EI、SCIE

Volume: 24

Issue: 24

Page Number: 245306

ISSN: 0957-4484

Abstract: InAs/InP core/shell nanowires with different shell thicknesses were grown by a two-step method, and large-scale assembly of single nanowire was realized by using dielectrophoresis alignment and patterned grooves. Thousands of single nanowire field-effect transistors were fabricated on a single chip. The effect of InP shell thickness on the electron mobility and density of InAs nanowires are experimentally investigated and discussed.