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Indexed by:期刊论文

Date of Publication:2012-11-15

Journal:JOURNAL OF CRYSTAL GROWTH

Included Journals:SCIE、EI、Scopus

Volume:359

Issue:1

Page Number:30-34

ISSN No.:0022-0248

Key Words:Nanostructures; Metalorganic chemical vapor deposition; Nanomaterials; Semiconducting III-V materials

Abstract:Vertical GaAs/AlGaAs heterostructure nanowires (NWs) with pure zinc blende structure were grown on Si (111) substrates by using AlGaAs/GaAs buffer layers. Axial and radial heterostructure NWs with different facets can be realized by tuning the growth temperature, so quantum wells with a triangular cross section enclosed by two {112}and one {110} facets can be obtained. Intensity of the room temperature photoluminescence can be greatly enhanced by passivating the surface states of GaAs NWs via growth of higher band-gap AlGaAs shells. The relevant growth mechanism is discussed. (C) 2012 Elsevier B.V. All rights reserved.