Hits:

Indexed by:期刊论文

Date of Publication:2010-11-30

Journal:MATERIALS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:64

Issue:22

Page Number:2475-2478

ISSN No.:0167-577X

Key Words:Cu2O; Galvanic deposition; Semiconductor; Solar energy materials; Octahedral

Abstract:A simple galvanic deposition technique has been developed to demonstrate the deposition of cuprous oxide (Cu2O) on transparent conducting oxide substrate for the first time. The result shows that the morphologies of galvanically obtained Cu2O crystals are mainly dependent on the nature of anions in aqueous solution. The presence of NO3-T ions tends to increase the stability of (111) planes of Cu2O cubes and makes the crystals develop a fraction of (111) planes at the corners of the Cu2O cubes. thus resulting in the formation of truncated octahedral Cu2O crystals. (C) 2010 Elsevier B V All lights reserved