Indexed by:期刊论文

Date of Publication:2014-01-01

Journal:VACUUM

Included Journals:SCIE、EI

Volume:99

Page Number:272-276

ISSN No.:0042-207X

Key Words:Vacuum induction melting; Directional solidification; Impurities; Purification; Silicon

Abstract:A multicrystalline silicon ingot was obtained from metallurgical-grade silicon by vacuum induction melting and directional solidification. Based on the concentration distributions of aluminum and calcium along the growth direction, the removal mechanism of such impurities with both high saturated vapor pressures and low segregation coefficients is investigated. The results show that the removal of this type of impurities only depends on evaporation during vacuum induction melting process, thus their contents decrease significantly due to the strongly evaporation under the high temperature and high vacuum conditions. During subsequent directional solidification process, a model including both segregation and evaporation is used to simulate the concentration distribution. The results show that the impurity distribution is controlled by both two mechanisms in the initial stage of solidification and is mainly determined by segregation in the end stage due to the decrease of the diffusibility and evaporability of the impurity atoms. (c) 2013 Elsevier Ltd. All rights reserved.