Indexed by:Journal Article

Date of Publication:2013-12-01

Journal:INTERNATIONAL JOURNAL OF THERMAL SCIENCES

Included Journals:Scopus、EI、SCIE

Volume:74

Issue:C

Page Number:37-43

ISSN:1290-0729

Key Words:Thermal contact resistance; Silicon and copper surfaces; Temperature field; Computer simulation

Abstract:This paper proposed a theoretical model to determine the thermal contact resistance (TCR) on the surfaces of silicon and copper during electron beam melting. The effect of temperature and pressure on TCR, based on specific melting process conditions, was discussed. Hertz's theory was used to analyze the characteristics of material surfaces and to calculate the relationship between the pressure and distance of contact surfaces, the real contact area and the number of contact asperities combined with the physical characteristics of the material. The geometric parameter of the theoretical model was obtained based on theoretical calculations. The TCR of the entire surface was obtained by analyzing the temperature field of silicon and copper using Ansys and TCR equations. The relationship among TCR, pressure, and temperature were found. The computational results agreed with existing experimental results. (C) 2013 Elsevier Masson SAS. All rights reserved.