- Removal of oxygen from silicon by electron beam melting
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- 论文类型： 期刊论文
- 发表时间： 2014-06-01
- 发表刊物： APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- 收录刊物： SCIE、EI、Scopus
- 卷号： 115
- 期号： 3
- 页面范围： 753-757
- ISSN号： 0947-8396
- 摘要： Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to < 0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 x 10(-5) kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.
