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Research of boron removal from polysilicon using CaO-Al2O3-SiO2-CaF2 slags
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论文类型: 期刊论文
发表时间: 2014-05-01
发表刊物: VACUUM
收录刊物: SCIE、EI、Scopus
卷号: 103
页面范围: 33-37
ISSN号: 0042-207X
关键字: Boron removal; Slag treatment; Upgraded metallurgical grade Si
摘要: Purification process of MG-Si was limited by the difficulties involved in reducing boron content. The possibility of removing impurity boron (B) in MG-Si using CaO-Al2O3-SiO2-CaF2 slags was investigated in the present study. Different from traditional research methods, the whole melting process was carried out under atmosphere condition, which was closer to the actual production conditions. The thermodynamic and kinetic mechanisms of B removal were analyzed. Based on the ionic structure theory, the relation between ionic structure of slags at high temperature and optical basicity can be explained firstly. The parameters, including the slag optical basicity, melting time and CaF2 content were discussed. The boron content was reduced from original 25 ppmw to 4.4 ppmw through 120 min melting with the optical basicity of 0.551 and 5 wt% CaF2 additions. (C) 2013 Elsevier Ltd. All rights reserved.

姜大川

副教授   硕士生导师

任职 : 中国产学研合作促进会常务理事

性别: 男

毕业院校:大连理工大学

学位: 博士

所在单位:材料科学与工程学院

学科:材料学

办公地点: 新三束实验室209

联系方式:0411-84709784

电子邮箱:jdc@dlut.edu.cn

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