个人信息Personal Information
副教授
博士生导师
硕士生导师
性别:男
毕业院校:大连理工大学
学位:博士
所在单位:材料科学与工程学院
学科:材料加工工程
办公地点:大连理工大学铸造中工程心
电子邮箱:xsfu@dlut.edu.cn
Effects of doping Ti3SiC2 with Al on interfacial microstructural evolution, growth kinetics and mechanical properties of Ti3SiC2/TiAl joints
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论文类型:期刊论文
发表时间:2021-03-05
发表刊物:JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
卷号:9
期号:6
页面范围:13206-13215
ISSN号:2238-7854
关键字:TiAl; Ti3SiC2; Growth kinetics; Interfacial microstructure; Amorphous intergranular films
摘要:Investigations of the interfacial microstructural evolution, the growth kinetics, and the mechanical properties in the Al-doped joint can derive guidelines for the knowledge-based parameter optimization of dissimilar Ti3SiC2/TiAl joining process. The interfacial microstructural evolution, the growth kinetics of the Ti3SiC2/TiAl joints was greatly altered by doping Ti3SiC2 with Al. The interface in the Ti-3(Si0.94Al0.06)C-2/TiAl and Ti-3(Si0.91Al0.09)C-2/TiAl joints changed from gamma+alpha(2)/TiAl3 + Ti5Si3 + Ti5Si4/Ti3SiC2 to gamma+alpha(2)/TiAl2/TiAl3 + Ti5Si3 + Ti5Si4/Ti3SiC2, to gamma+alpha(2)/gamma/TiAl2/TiAl3 + Ti5Si3 + Ti5Si4/Ti3SiC2, and to gamma+alpha(2)/gamma/TiAl2/TiAl3 + Ti5Si3 +Ti5Si4/Ti5Si3/Ti3SiC2 as the bonding temperature and duration increased. The growth of the interfacial compound layer in the Ti-3(Si0.94Al0.06)C-2/TiAl and Ti-3(Si0.91Al0.09)C-2/TiAl joints followed the cubic law and was controlled by grainboundary diffusion. The Al was the mainly diffusion elements in the Al-doped joints, and its diffusion in the Ti-3(Si,Al)C-2 substrate and in the interfacial layer was both along the grainboundaries. The bonding activation energies for the Al-doped joints were about 180 kJ/mol, which were much lower than the value (225 kJ/mol) for the undoped Ti3SiC2/TiAl joint. The highest shear strength of the Al-doped joints was about 65 MPa and was about 23% higher than the value of the undoped joint. (C) 2020 The Author(s). Published by Elsevier B.V.