location： Current position: Home >> Scientific Research >> Paper Publications

Oxide unlocking electron beam melting to separate boron for impurities co-removal of metallurgical grade silicon

Hits:

Journal:Separation and Purification Technology

Volume:325

ISSN No.:1383-5866

Pre One:Effect of metal impurities concentration on electrical properties in N-type Recharged-Czochralski silicon

Next One:Control of the Thermal Field of S/L Interface Front and Crystal Growth of Mono-Like Crystalline Silicon Assisted by Direct Current
Recommended Ph.D.Supervisor Recommended MA Supervisor Institutional Repository Personal Page

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024

Click : times
  • MOBILE Version
    •
    Open time:..
    The Last Update Time:..

    Mobile phone sweep