论文名称：Scrutinizing Defects and Defect Density of Selenium-Doped Graphene for High-Efficiency Triiodide Reduction in Dye-Sensitized Solar Cells.
论文类型：期刊论文
发表刊物：Angewandte Chemie (International ed. in English)
收录刊物：PubMed、SCIE、EI
卷号：57
期号：17
页面范围：4682-4686
ISSN号：1521-3773
关键字：defects; dye-sensitized solar cells; ionization energy; selenium-doped graphene; triiodide reduction
摘要：Understanding the impact of the defects/defect density of electrocatalysts on the activity in the triiodide (I3- ) reduction reaction of dye-sensitized solar cells (DSSCs) is indispensable for the design and construction of high-efficiency counter electrodes (CEs). Active-site-enriched selenium-doped graphene (SeG) was crafted by ball-milling followed by high-temperature annealing to yield abundant edge sites and fully activated basal planes. The density of defects within SeG can be tuned by adjusting the annealing temperature. The sample synthesized at an annealing temperature of 900°C exhibited a superior response to the I3- reduction with a high conversion efficiency of 8.42%, outperforming the Pt reference (7.88%). Improved stability is also observed. DFT calculations showed the high catalytic activity of SeG over pure graphene is a result of the reduced ionization energy owing to incorporation of Se species, facilitating electron transfer at the electrode-electrolyte interface. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
发表时间：2018-01-01