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Growth mechanism of Cu3Sn grains in the (111)Cu/Sn/Cu micro interconnects

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Indexed by:会议论文

Date of Publication:2018-01-01

Included Journals:CPCI-S

Page Number:1748-1750

Key Words:electronic packaging; soldering; intermetallic compound; grain orientation; temperature gradient; anisotropy

Abstract:The anisotropic properties of micro solder interconnects in physical and mechanical behaviors have been deemed as a severe reliability concern. In the present work, the morphology and orientation characteristic of Cu3Sn grains in the (111)Cu/Sn/Cu solder interconnects was investigated. After soldering for 500 min under a temperature gradient of 150 degrees C/cm, a full IMC (Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu) interconnect was fabricated. The thicknesses of the Cu3Sn layers at the cold end and hot end were comparatively. However, the asymmetrical morphology of Cu3Sn layers and asymmetrical formation of Kirkendall voids between the cold and hot ends were observed. The probable reason might be attributed to the morphology and orientation of the Cu3Sn grains. The Cu3Sn grains exhibited a preferred orientation. The growth mechanisms of the Cu3Sn and Kirkendall voids were discussed.

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