徐琴琴   

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一种超临界二氧化碳脉冲可控生长二维半导体薄膜的方法

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First Author:徐琴琴

Disigner of the Invention:王启博,银建中,柳宝林,王志刚

Institution:化工学院

Application Date:2020-09-11

Application Number:202010950444.7

Authorization Date:2021-09-24

Authorization Number:ZL 202010950444.7

Address: No.2 Linggong Road, Ganjingzi District, Dalian City, Liaoning Province, P.R.C., 116024
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