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论文类型：期刊论文

发表时间：2013-05-01

发表刊物：INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY

收录刊物：SCIE、EI、Scopus

卷号：66

期号：5-8

页面范围：947-953

ISSN号：0268-3768

关键字：Ultrathin blade; High-speed dicing; Silicon wafer; Chipping

摘要：High-speed dicing tests were conducted for silicon wafers using developed ultrathin electroplated diamond blades with metal bond. Chipping and kerf widths of 1.5 and 28 mu m, respectively, are achieved by the developed ultrathin diamond blades. The calculated maximum undeformed chip thickness varied from 9.6 to 25.5 nm for various high-speed dicing conditions. The variation tendency between experimental chip width induced by three diamond blades and corresponding calculated maximum undeformed chip thickness is consistent. Scanning electron microscopy showed that the microstructure of diamond dicing blades significantly affected the chip width.