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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Terahertz transmission properties of VO2 thin films deposited on c- and m-plane sapphire substrates by pulsed laser deposition
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论文类型：会议论文
发表时间：2013-03-22
收录刊物：EI、Scopus
卷号：710
页面范围：25-28
摘要：Vanadium dioxide (VO2) films were grown on c- and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO2 ceramic target. The VO2 films with preferred growth orientation and uniform dense distribution have been achieved on both substrates, as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The terahertz (THz) transmission properties of VO2 thin films were studied by terahertz time-domain spectroscopy (THz-TDS). The results indicate that the THz transmission properties of VO2 films are strongly influenced by the sapphire substrate orientation, suggesting that VO2 films are ideal material candidates for THz modulation. ? (2013) Trans Tech Publications, Switzerland.