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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Low-temperature growth of highly c-oriented GaN films on Cu coated glass substrates with ECR-PEMOCVD
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论文类型：期刊论文
发表时间：2013-04-01
发表刊物：JOURNAL OF CRYSTAL GROWTH
收录刊物：SCIE、EI
卷号：368
页面范围：92-96
ISSN号：0022-0248
关键字：Cu substrates; Low temperature; ECR-PEMOCVD; GaN films
摘要：Highly c-axis oriented GaN films were deposited on Cu coated glass substrates using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). In-situ reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to systematically analyze the influence of TMGa flux on the crystalline quality of the GaN films. GaN films with strong c-axis preferred orientation were achieved under the optimal TMGa flux of 1.4 sccm. Moreover, a strong near band edge (NBE) emission peak located at 354 nm was observed in the room temperature PL spectrum for the optimized GaN sample. The GaN/Cu/glass structure shows great potential for application in large area low cost GaN-based LED devices. (C) 2013 Elsevier B.V. All rights reserved.