边继明

个人信息Personal Information

教授

博士生导师

硕士生导师

性别:男

毕业院校:中科院上海硅酸盐研究所

学位:博士

所在单位:物理学院

学科:微电子学与固体电子学. 凝聚态物理

办公地点:大连理工大学科技园C座301-1办公室

联系方式:E-mail:jmbian@dlut.edu.cn.

电子邮箱:jmbian@dlut.edu.cn

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Surface photovoltage analysis of ZnO nanorods/p-Si heterostructure

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论文类型:期刊论文

发表时间:2013-04-01

发表刊物:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

收录刊物:SCIE、EI

卷号:16

期号:2

页面范围:520-524

ISSN号:1369-8001

关键字:ZnO nanorod; Si; Surface photovoltage; Kelvin probe

摘要:In this work, n-type ZnO nanorods (NRs) were fabricated on a p-type Si substrate to form a ZnO NRs/Si structure using a low-temperature wet chemical bath deposition method. Kelvin-probe-based surface photovoltage (KP-based SPV) technology was used to study the behavior of surface photogenerated charges for the as-grown heterostructure. In general, the KP-based SW response range of the ZnO NRs/Si structure was significantly expanded compared with the bare Si substrate, due to the incorporation of ZnO NRs. Moreover, the SPV response amplitude for ZnO NRs/Si structure also depended on the length and diameter of the NRs, and the corresponding mechanism was elucidated in terms of O-2 adsorption. The photovoltaic application of the ZnO NRs/Si based structure would benefit significantly from these achievements. (C) 2012 Elsevier Ltd. All rights reserved.