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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD
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论文类型：期刊论文
发表时间：2014-01-15
发表刊物：JOURNAL OF ALLOYS AND COMPOUNDS
收录刊物：SCIE、EI
卷号：583
页面范围：39-42
ISSN号：0925-8388
关键字：Gallium nitride (GaN); Glass substrate; Plasma-enhanced metal organic chemical; vapor deposition system (ECR-PEMOCVD); Low temperature growth
摘要：A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crystalline GaN films with atomically smooth surface were achieved on amorphous Ni/glass substrate at an extremely low temperature of similar to 480 degrees C. This GaN/Ni/glass structures have great potential for dramatically improve the scalability and cost of solid-state lighting, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique. (C) 2013 Elsevier B. V. All rights reserved.