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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Effect of buffer layer on the structural and morphological properties of GaN films grown with ECR-PEMOCVD
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论文类型：期刊论文
发表时间：2012-01-01
发表刊物：DIAMOND AND RELATED MATERIALS
收录刊物：SCIE、EI
卷号：21
页面范围：88-91
ISSN号：0925-9635
关键字：GaN films; Diamond substrates; SAW devices; ECR-PEMOCVD
摘要：Prefer-oriented GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) at various buffer layers. Trimethyl gallium (TMGa) and N-2 are applied as precursors and various buffer layers are used to achieve high quality GaN films. The influence of buffer layers process on the properties of GaN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD) and atomic force microscopy (AFM). The results show that the high quality GaN films deposited at proper buffer layer process display the fine structural and morphological properties. (C) 2011 Elsevier B.V. All rights reserved.