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个人信息Personal Information
教授
博士生导师
硕士生导师
性别：男
毕业院校：中科院上海硅酸盐研究所
学位：博士
所在单位：物理学院
学科：微电子学与固体电子学. 凝聚态物理
办公地点：大连理工大学科技园C座301-1办公室
联系方式：E-mail:jmbian@dlut.edu.cn.
电子邮箱：jmbian@dlut.edu.cn
Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates
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论文类型：期刊论文
发表时间：2010-01-01
发表刊物：CHINESE PHYSICS LETTERS
收录刊物：SCIE、ISTIC
卷号：27
期号：1
ISSN号：0256-307X
摘要：Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550 degrees C exhibits p-type conductivity. It gives a resistivity of 15.25 Omega.cm, with a Hall mobility of 1.79 cm(2)V(-1)s(-1) and a carrier concentration of 2.290 x 10(17) cm(-3) at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650 degrees C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550 degrees C shows the strong acceptor-bound exciton (A(0)X) emission.